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Electrical Characteristics
Table 15. 10-bit ADC Characteristics (continued)
Characteristic
Supply current
ADC asynchronous clock
source
Conversion time (including
sample time)
Sample time
Total unadjusted error
Differential non-linearity
Conditions
Stop, reset, module off
High speed (ADLPC = 0)
Low power (ADLPC = 1)
Short sample (ADLSMP=0)
Long sample (ADLSMP=1)
Short sample (ADLSMP=0)
Long sample (ADLSMP=1)
10 bit mode
8 bit mode
10 bit mode
8 bit mode
C
T
T
P
P
C
P
T
Symb
I DDAD
f ADACK
t ADC
t ADS
E TUE
DNL
Min
—
—
—
—
—
—
—
—
—
—
—
Typical 1
0.011
3.3
2
20
40
3.5
23.5
± 1
± 0.5
± 0.5
± 0.3
Max
1
—
—
—
—
—
—
± 2.5
± 1.0
± 1.0
± 0.5
Unit
μ A
MHz
ADCK
cycles
ADCK
cycles
LSB 2
LSB 2
Monotonicity and No-Missing-Codes guaranteed
Integral non-linearity
Zero-scale error
Full-Scale error
V ADIN = V DDA
Quantization error
Input leakage error
pad leakage 3 * R AS
10 bit mode
8 bit mode
10 bit mode
8 bit mode
10 bit mode
8 bit mode
10 bit mode
8 bit mode
10 bit mode
8 bit mode
C
P
T
P
T
D
D
INL
E ZS
E FS
E Q
E IL
—
—
—
—
—
—
—
—
—
—
± 0.5
± 0.3
± 0.5
± 0.5
± 0.5
± 0.5
—
—
± 0.2
± 0.1
± 1.0
± 0.5
± 1.5
± 0.5
± 1.5
± 0.5
± 0.5
± 0.5
± 2.5
± 1
LSB 2
LSB 2
LSB 2
LSB 2
LSB 2
1
Typical values assume Temp = 25 ° C, f ADCK = 1.0 MHz unless otherwise stated. Typical values are for reference only and are
2 1 LSB = (V
REFH – V REFL )/2
not tested in production.
N
3 Based on input pad leakage current. Refer to pad electrical.
3.13
Flash Specifications
This section provides details about program/erase times and program-erase endurance for the flash
memory. For detailed information about program/erase operations, see the reference manual.
Table 16. Flash Characteristics
Characteristic
Supply voltage for program/erase
Symbol
V DD
Min
2.7
Typical 1
—
Max
5.5
Unit
V
MC9RS08KA8 Series MCU Data Sheet, Rev. 4
Freescale Semiconductor
23
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